Research in Engineering and Aviation

Scanning Charge Accumulation Probe of Semiconductor Donor Molecules

October 2007

Author(s): S. H. Tessmer, I. Kuljanishvili, C. Piermarocchi, T. Kaplan, J. Harrison

AIP Conference Proceedings, Workshop on Mesoscopic Physics, WNMP07, 130-134, 2008. DOI: 10.1063/1.2915582


We have developed a scanning probe method that is able to detect individual electrons entering a system of semiconductor donor atoms. We have applied the method to a system of Si donors within a GaAs‐AlGaAs heterostructure sample. The data compare well to a model that considers donor molecules, effectively formed by nearest‐neighbor silicon atoms.